R6020ANZ 查看數據表（PDF） - ROHM Semiconductor

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产品描述 (功能)

比赛名单

R6020ANZ

10V Drive Nch MOSFET

ROHM Semiconductor 

Data Sheet

10V Drive Nch MOSFET

R6020ANZ

 Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

 Application

Switching

 Dimensions (Unit : mm)

TO-3PF

15.5

φ3.6

5.5 3.0

2.0

0.75

(1) Gate

(2) Drain

(3) Source

(1) (2) (3)

5.45 5.45

2.0 3.0

0.9

 Packaging specifications

Package

Bulk

Type Code

-

Basic ordering unit (pieces) 360

R6020ANZ



 Inner circuit

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Source current

(Body Diode)

Continuous

Pulsed

Avalanche current

Avalanche energy

Power dissipation

Channel temperature

Range of storage temperature

VDSS

600

V

VGSS

30

V

ID *3

20

A

IDP *1

80

A

IS *3

20

A

ISP *1

80

A

IAS *2

10

A

EAS *2

26.7

mJ

PD *4

120

W

Tch

150

C

Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, VDD=50V, RG=25, Tch=25°C

*3 Limited only by maximum channel temperature allowed.

*4 TC=25°C

 Thermal resistance

Parameter

Channel to Case

* TC=25°C

Symbol

Rth (ch-c) *

Limits

1.04

Unit

C / W

(1) Gate

(2) Drain

(3) Source

(1)

(2)

(3)

1 BODY DIODE

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1/5

2011.10 - Rev.A

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