R6020FNX 查看數據表（PDF） - ROHM Semiconductor
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R6020FNX Datasheet PDF : 15 Pages
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R6020FNX
Electrical characteristic curves
Data Sheet
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
100000
18
10000
1000
Ta = 25ºC
f = 1MHz
VGS = 0V
Ciss
16
Ta = 25ºC
14
12
10
for
100
Coss
d 10
Crss
de 1
n s 0.01
0.1
1
10 100 1000
Drain - Source Voltage : VDS [V]
8
6
4
2
0
0
200
400
600
Drain - Source Voltage : VDS [V]
me sign Fig.20 Switching Characteristics
m e 10000
co D 1000
td(off)
VDD≒300V
VGS=10V
RG=10
Ta=25ºC
Pulsed
e w 100
tf
t R Ne 10
tr
td(on)
No1
Fig.21 Dynamic Input Characteristics
12
Ta=25ºC
10
VDD=300V
ID=20A
Pulsed
8
6
4
2
0
0.01
0.1
1
10
100
0 10 20 30 40 50 60 70
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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10/13
2016.02 - Rev.D
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