RCD100N20 查看數據表（PDF） - ROHM Semiconductor
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RCD100N20 Datasheet PDF : 7 Pages
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RCD100N20
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
5
Ta=25°C
Pulsed
VGS=10.0V
VGS=8.0V
4
VGS=7.0V
3
VGS=6.5V
2
1
VGS=6.0V
VGS=5.5V
0
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
100
VDS=10V
pulsed
10
Ta= 125°C
Ta= 75°C
1
Ta= 25°C
Ta= - 25°C
0.1
0.01
0.001
1 2 3 4 5 6 7 8 9 10
Gate-Source Voltage : VGS [V]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1
VGS=10V
pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
0.01
0.1
1
10
100
Drain Current : ID [A]
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
10
VGS=10.0V
8
VGS=8.0V
Ta=25°C
Pulsed
VGS=7.0V
6
4
VGS=6.5V
2
VGS=6.0V
VGS=5.5V
0
0
2
4
6
8
10
Drain-Source Voltage : VDS [V]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
5
VDS=10V
ID=1mA
pulsed
4
3
2
1
0
-50 -25
0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
0.35
0.3
VGS=10V
pulsed
0.25
0.2
ID=10A
0.15
0.1
ID=5A
0.05
0
-50 -25
0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
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3/6
2011.10 - Rev.A
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