RD12MVS1(2006) 查看數據表（PDF） - Mitsumi
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| RD12MVS1 Datasheet PDF : 0 Pages | |||
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
40
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
30
20
Po
Gp
80
ηｄ
60
40
10
20
Ｉｄｄ
0
-5 0
0
5 10 15 20 25 30
Pin(dBm)
Pin-Po CHARACTERISTICS @f=175MHz
14
Po
12
10
ηd
8
90
80
Ta=25°C
f=175MHz
Vdd=7.2V
70
Idq=1.0A
60
6
50
4
Idd
40
2
30
0
20
0
200 400 600 800 1000
Pin(mW)
Vdd-Po CHARACTERISTICS @f=175MHz
25
Ta=25°C
f=175MHz
20 Pin=0.3W
Icq =700mA
Zg=ZI=50 ohm Idd
5
Po
4
15
3
10
2
5
1
0
0
4
6
8
10
12
Vdd(V)
Vgs-Ids CHARACTORISTICS 2 -25°C
8
Vds=10V
Tc=-25~+75°C
+25°C
+75°C
6
4
2
0
0
2
4
6
8
Vgs(V)
RD12MVS1
MITSUBISHI ELECTRIC
3/7
10 Jan 2006
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