RFD4N06L 查看數據表（PDF） - Fairchild Semiconductor

零件编号

产品描述 (功能)

比赛名单

RFD4N06L

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

Fairchild Semiconductor 

Data Sheet

RFD4N06L, RFD4N06LSM

January 2002

4A, 60V, 0.600 Ohm, Logic Level,

N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement

mode silicon gate power field effect transistors specifically

designed for use with logic level (5 volt) driving sources in

applications such as programmable controllers, automotive

switching, and solenoid drivers. This performance is

accomplished through a special gate oxide design which

provides full rated conduction at gate biases in the 3-5 volt

range, thereby facilitating true on-off power control from logic

circuit supply voltages.

Formerly developmental type TA09520.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD4N06L

TO-251AA

RFD4N06L

RFD4N06LSM

TO-252AA

RFD4N06LSM

NOTE: When ordering, use the entire part number.

Features

• 4A, 60V

• rDS(ON) = 0.600Ω

• Design Optimized for 5 Volt Gate Drive

• Can be Driven Directly From Q-MOS, N-MOS,

or TTL Circuits

• SOA is Power Dissipation Limited

• 175oC Rated Junction Temperature

• Logic Level Gate

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-251AA

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

JEDEC TO-252AA

DRAIN

(FLANGE)

GATE

SOURCE

©2002 Fairchild Semiconductor Corporation

RFD4N06L, RFD4N06LSM Rev. B

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