RJK5009DPP 查看數據表（PDF） - Renesas Electronics

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RJK5009DPP

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK5009DPP

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

500

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

3.0

Static drain to source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Notes: 5. Pulse test

Typ

—

—

—

—

0.260

Max

—

1

±0.1

4.5

0.325

Unit

V

µA

µA

V

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 500 V, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 10 A, VGS = 10 V Note5

2100

—

pF VDS = 25 V

220

—

pF VGS = 0

27

—

pF f = 1 MHz

35

—

ns ID = 10 A

33

—

ns VGS = 10 V

97

—

ns RL = 25 Ω

17

—

ns Rg = 10 Ω

52

10.5

22

1.0

—

nC VDD = 400 V

—

nC VGS = 10 V

—

nC ID = 20 A

1.6

V IF = 20 A, VGS = 0 Note5

320

—

ns IF = 20 A, VGS = 0

diF/dt = 100 A/µs

REJ03G1606-0100 Rev.1.00 Dec 04, 2007

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