RJK5013DPK 查看數據表（PDF） - Renesas Electronics

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RJK5013DPK

Silicon N-Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK5013DPK

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

500

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

3.0

Static drain to source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Notes: 4. Pulse test

Typ

—

—

—

—

0.385

Max

—

1

±0.1

4.5

0.465

Unit

V

µA

µA

V

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 500 V, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 7 A, VGS = 10 V Note4

1450

—

pF VDS = 25 V

155

—

pF VGS = 0

19

—

pF f = 1 MHz

34

—

ns ID = 7 A

24

—

ns VGS = 10 V

86

—

ns RL = 35.7 Ω

16

—

ns Rg = 10 Ω

38

—

nC VDD = 400 V

8

—

nC VGS = 10 V

17

—

nC ID = 14 A

0.9

1.5

V IF = 14 A, VGS = 0 Note4

310

—

ns IF = 14 A, VGS = 0

diF/dt = 100 A/µs

Rev.1.00 Nov 30, 2006 page 2 of 3

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