RJK6002DPD 查看數據表（PDF） - Renesas Electronics

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RJK6002DPD

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6002DPD

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0004ZA-A

(Package name : MP-3A)

2, 4

4

1

12 3

3

REJ03G1483-0100

Rev.1.00

Nov 09, 2006

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

Symbol

VDSS

VGSS

ID

ID

Note1

(pulse)

IDR

IDR

Note1

(pulse)

IAPNote3

EARNote3

Pch Note2

θch-c

Tch

Tstg

Ratings

600

±30

2

4

2

4

1

0.05

30

4.17

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

°C/W

°C

°C

Rev.1.00 Nov 09, 2006 page 1 of 3

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