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RQA0001DNS 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
比赛名单
RQA0001DNS
Renesas
Renesas Electronics Renesas
RQA0001DNS Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
RQA0001DNS
Silicon N-Channel MOS FET
Features
High Output Power, High Gain, High Efficiency
Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)
Outline
RENESAS Package code: PWSN0002ZA-A
(Package name: HWSON-2 <WSON0303-2>)
3
3
2
1
1
3
2
1
2
Note: Marking is “A0001”.
REJ03G0582-0300
Rev.3.00
Oct 11, 2006
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
0.8
5
150
–50 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
Rev.3.00 Oct 11, 2006 page 1 of 12

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