S9015LT1 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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S9015LT1

SOT-23 Plastic-Encapsulate PNP Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

S9015LT1 TRANSISTOR（ PNP ）

FEATURES

Power dissipation

PCM : 0.2

W（Tamb=25℃）

Collector current

ICM : -0.1

A

Collector-base voltage

V(BR)CBO : -50

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150

SOT— 23

1. BASE

2. EMITTER

3. COLLECTOR

２．４

１．３

Unit : mm

ELECTRICAL CHARACTERISTICS（Tamb=25℃

Parameter

Symbol

unless otherwise specified）

Test conditions

MIN

TYP

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V(BR)CBO Ic= -100μA， IE=0

-50

V(BR)CEO Ic= -0.1m A， IB=0

-45

V(BR)EBO IE=-100μA， IC=0

-5

Collector cut-off current

ICBO

VCB=-50 V , IE=0

Emitter cut-off current

IEBO

VEB= -5V , IC=0

MAX UNIT

V

V

V

-0.1

μA

-0.1

μA

DC current gain

HFE(1)

VCE=-5V, IC= -1m A

200

1000

Collector-emitter saturation voltage

VCE(sat) IC=-100 mA, IB= -10m A

-0.3

V

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=-100 mA, IB=-10m A

VCE=-5V, IC= -10mA

fT

150

f=30MHz

-1

V

MHz

CLASSIFICATION OF HFE(1)

Ｒａｎｋ　

Ｒａｎｇｅ　　

Ｌ　

２００－４５０　

Ｈ　

４５０－１０００　

DEVICE MARKING : S9015LT1=M6

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