SBL82314X 查看數據表（PDF） - Infineon Technologies

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SBL82314X

Low Power BIDI® Optical Standard Module 1550 nm Emitting, 1310 nm Receiving

Infineon Technologies 

SBL82314x

Technical Data

The electro-optical characteristics described in the following tables are only valid for use

within the specified maximum ratings or under the recommended operating conditions.

Transmitter Electro-Optical Characteristics

Parameter

Symbol

min.

Optical output power

(maximum)

PF, max

0.4

Emission wavelength center of

range, PF = 0.5 PF, max.

Spectral width (RMS)

Temperature coefficient of

wavelength

λtrans

σλ

TC

1510

Threshold current

Ith

2

(whole temperature range)

Forward voltage, PF = 0.5 PF, max. VF

Radiant power at Ith

Pth

Slope efficiency (–40...85°C) η

8

Variation of 1st derivative of P/I Svar

–30

(0.05 to 0.4 mW)

Differential series resistance RS

Rise time (10%–90%)

tr

Fall time (10%–90%)

tf

Limit Values

typ.

max.

1590

5

0.5

55

1.5

20

60

30

8

100

200

270

500

Unit

mW

nm

nm/K

mA

V

µW

mW/A

%

Ω

ps

Monitor Diode Electro-Optical Characteristics

Parameter

Symbol

Limit Values Unit

min.

max.

Dark current, VR = 5 V, PF = 0, T = Tmax

IR

200

nA

Photocurrent, VR = 5 V, PF = 0.5 PF, max

IP

50

1500

µA

Capacitance, VR = 5 V, f = 1 MHz

C5

10

pF

Tracking error1), VR = 5 V

TE

–1

1

dB

1) The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature

range and relative to the reference point: Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by:

TE[dB] = 10 × log ----P----F---[--T----C---]----

PF [ 25°C ]

Data Sheet

6

2002-05-01

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