SCP25C60 查看數據表（PDF） - SemiWell Semiconductor

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SCP25C60

Silicon Controlled Rectifiers

SemiWell Semiconductor 

SCP25C60

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol

Items

Conditions

Ratings

Unit

Min. Typ. Max.

IDRM

Repetitive Peak Off-State

Current

VTM

Peak On-State Voltage (1)

IGT

Gate Trigger Current (2)

VAK = VDRM

TC = 25 °C

─

TC = 125 °C

─

ITM = 50 A

tp=380㎲

─

VAK = 6 V(DC), RL=10 Ω

TC = 25 °C

─

─

10

㎂

─

200

─

1.6

V

─

15

mA

VGT

Gate Trigger Voltage (2)

VD = 6 V(DC), RL=10 Ω

TC = 25 °C

─

─

1.5

V

VGD

Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω

TC = 125 °C

0.2

─

─

V

dv/dt

Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,

Voltage

Gate open

TJ = 125°C

250

─

─ V/㎲

IH

Holding Current

IT = 100mA, Gate Open

TC = 25 °C

─

2

20

mA

Rth(j-c)

Rth(j-a)

Thermal Impedance

Thermal Impedance

Junction to case

Junction to Ambient

※ Notes :

1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%

2. RGK Current not Included in measurement.

─

─

1.1 °C/W

─

─

60 °C/W

2/5

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