SI3233 查看數據表（PDF） - Silicon Laboratories

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SI3233

PROSLIC® PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION

Silicon Laboratories 

Si3233

Table 5. Monitor ADC Characteristics

(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for F-Grade, –40 to 85°C for G-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Differential Nonlinearity

(6-bit resolution)

Integral Nonlinearity

(6-bit resolution)

Gain Error (voltage)

DNLE

INLE

–1/2

—

–1

—

—

—

1/2

LSB

1

LSB

10

%

Gain Error (current)

—

—

20

%

Table 6. Si3233 DC Characteristics, VDDA = VDDD = 5.0 V

(VDDA,VDDD = 4.75 V to 5.25 V, TA = 0 to 70°C for F-Grade, –40 to 85°C for G-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

High Level Input Voltage

VIH

Low Level Input Voltage

VIL

High Level Output Voltage VOH

Low Level Output Voltage VOL

Input Leakage Current

IL

SDITHRU: IO = –4 mA

SDO: IO = –8 mA

SDITHRU: IO = 4 mA

SDO,INT: IO = 8 mA

0.7 x VDDD —

—

V

—

— 0.3 x VDDD V

VDDD – 0.6 —

—

V

—

—

0.4

V

–10

—

10

µA

Table 7. Si3233 DC Characteristics, VDDA = VDDD = 3.3 V

(VDDA,VDDD = 3.13 V to 3.47 V, TA = 0 to 70°C for F-Grade, –40 to 85°C for G-Grade)

Parameter

Symbol

Test Condition

Min

Typ

High Level Input Voltage

VIH

Low Level Input Voltage

VIL

0.7 x VDDD —

—

—

High Level Output Voltage VOH

Low Level Output Voltage VOL

Input Leakage Current

IL

SDITHRU: IO = –2 mA

SDO: IO = –4 mA

SDITHRU: IO = 2 mA

SDO,INT: IO = 4 mA

VDDD – 0.6 —

—

—

–10

—

Max

—

0.3 x VDD

D

—

0.4

10

Unit

V

V

V

V

µA

8

Preliminary Rev. 0.5

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