![](/html/ETC1/610808/page2.png)
SMA6080
Electrical characteristics
NPN
Symbol
ICBO
IEBO
Specification
min
typ
max
10
5
Unit
µA
mA
VCEO
hFE
60
V
2000 5000 12000
VCE(sat)
1.1
1.5
V
VBE(sat)
VFEC
ton
tstg
tf
fT
1.8
2.2
V
1.3
1.8
V
0.5
µs
4.5
µs
1.2
µs
50
MHz
Cob
20
pF
Conditions
VCB=60V
VEB=6V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=2mA
IFEC=1A
VCC 30V,
IC=1A,
IB1=–IB2=2mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
PNP
Specification
Unit
min
typ
max
–10
µA
–5
mA
–60
V
2000 5000 12000
–1.2
–1.5
V
–1.9
–2.2
V
–1.3
–1.8
V
0.4
µs
1.0
µs
0.4
µs
100
MHz
30
pF
(Ta=25°C)
Conditions
VCB=–60V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–1A
IC=–1A, IB=–2mA
IFEC=–1A
VCC –30V,
IC=–1A,
IB1=–IB2=–2mA
VCE=–12V, IE=0.1A
VCB=–10V, f=1MHz
Characteristic curves
NPN
3
Ta=125°C
75°C
2
25°C
–30°C
VCE(sat)-IB Characteristics (Typical)
(IC=1A)
PNP
–3
Ta=125°C
75°C 25°C
–30°C
–2
(IC=–1A)
1
–1
0
0.1
0.5
1
5
IB (mA)
0
–0.1
–0.5
–1
–5
IB (mA)
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
(IC/IB=1000)
3
PNP (IC/IB=1000)
–3
2
1
0
0.2
5
1
0.5
0.5
1
IC (A)
NPN
10ms
1ms
–2
Ta=–30°C
–1 75°C 25°C
125°C
0
4
–0.2
Safe Operating Area (SOA)
–5
–0.5
–1
IC (A)
PNP
–1
–0.5
–4
100µs
0.1
0.05
Single Pulse
Without Heatsink
0.03 Ta=25°C
35
10
50
VCE (V)
100 200
–0.1
–0.05
Single Pulse
Without Heatsink
–0.03 Ta=25°C
–3 –5
–10
VCE (V)
–50
–100
θ j-a-PW Characteristics
NPN
20
10
5
1
0.5
0.2 0.5 1
5 10
50 100
PW (mS)
500 1000
PNP
20
10
5
1
0.5
0.2 0.5 1
5 10
50 100
PW (mS)
500 1000
PT-Ta Characteristics
20
15
10
5 Without Heatsink
0
–40
0
50
100
150
Ta (°C)