UT61L256LS-12 查看數據表（PDF） - Utron Technology Inc
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UT61L256LS-12 Datasheet PDF : 10 Pages
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Rev. 1.3
UTRON
UT61L256
32K X 8 BIT HIGH SPEED LOW VCC CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to VSS
VTERM
-0.5 to +4.5
V
Operating Temperature
TA
0 to +70
℃
Storage Temperature
TSTG
-65 to +150
℃
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device
reliability.
TRUTH TABLE
MODE
CE
Standby
H
Output Disable
L
Read
L
Write
L
Note: H = VIH, L=VIL, X = Don't care.
OE
WE
X
X
H
H
L
H
X
L
I/O OPERATION
High - Z
High - Z
DOUT
DIN
SUPPLY CURRENT
ISB, ISB1
ICC
ICC
ICC
DC ELECTRICAL CHARACTERISTICS (VCC = 3.1V~3.6V, TA = 0℃ to 70℃)
PARAMETER
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYMBOL TEST CONDITION
VIH
VIL
ILI
VSS ≦VIN ≦VCC
ILO
VSS ≦VI/O ≦VCC
CE =VIH or OE =VIH or WE = VIL
VOH IOH= - 4mA
VOL IOL= 8mA
ICC
CE = VIL ,
-8
II/O = 0mA ,Cycle=Min.
- 10
- 12
- 15
ISB
CE =VIH
ISB1
CE ≧VCC-0.2V
MIN.
2.0
-
-1
-1
2.2
-
-
-
-
-
-
-
MAX.
-
0.8
1
1
UNIT
V
V
µA
µA
-
V
0.4
V
90
mA
75
mA
60
mA
50
mA
15
mA
3
mA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
P80023
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