UT61L6416MC-12 查看數據表（PDF） - Utron Technology Inc
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UT61L6416MC-12 Datasheet PDF : 9 Pages
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Rev. 1.0
UTRON
UT61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
FEATURES
Fast access time :
8ns for Vcc=3.15V~3.6V
10/12/15ns for Vcc=3.0V~3.6V
CMOS low power operating :
Operating current : 150mA (max.)
Standby current : 3mA (max.)
Single 3.15~3.6V power supply
Operating temperature :
Commercial : 0℃~70℃
All TTL compatible inputs and outputs
Fully static operation
Three state outputs
Data byte control : LB (I/O0~I/O7)
UB (I/O8~I/O15)
Package : 44-pin 400mil TSOPⅡ
FUNCTIONAL BLOCK DIAGRAM
A0-A15
Vcc
Vss
DECODER
64K × 16 bit
MEMORY
ARRAY
I/O0-I/O15
I/O DATA
CIRCUIT
COLUMN I/O
GENERAL DESCRIPTION
The UT61L6416 is a 1,048,576-bit high speed
CMOS static random access memory organized
as 65,536 words by 16 bits.
The UT61L6416 operates from a single 3.15 ~
3.6V power supply and all inputs and outputs are
fully TTL compatible.
The UT61L6416 is designed for lower and upper
byte access by data byte control.( LB UB )
PIN DESCRIPTION
SYMBOL
A0 - A15
I/O0 - I/O15
CE
WE
OE
LB
UB
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
No Connection
PIN CONFIGURATION
CE
OE
CONTROL
WE
CIRCUIT
UB
LB
A4
1
A3
2
A2
3
A1
4
A0
5
CE
6
I/O0
7
I/O1
8
I/O2
9
I/O3
10
Vcc
11
Vss
12
I/O4
13
I/O5
14
I/O6
15
I/O7
16
WE
17
A15
18
A14
19
A13
20
A12
21
NC
22
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
TSOP II
44
A5
43
A6
42
A7
41
OE
40
UB
39
LB
38
I/O15
37
I/O14
36
I/O13
35
I/O12
34
Vss
33
Vcc
32
I/O11
31
I/O10
30
I/O9
29
I/O8
28
NC
27
A8
26
A9
25
A10
24
A11
23
NC
P80072
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