UT62L2568BSL-55LE 查看數據表（PDF） - Utron Technology Inc

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UT62L2568BSL-55LE

256K X 8 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.1

UTRON

UT62L2568

256K X 8 BIT LOW POWER CMOS SRAM

REVISION HISTORY

REVISION

Preliminary Rev. 0.1

Rev. 1.0

Rev. 1.1

DESCRIPTION

Original.

1. Revised Power supply

a、 55ns (max.) for Vcc=2.7V~3.6V

b、 70/100ns (max.) for Vcc=2.5V~3.6V

2. Revised DC ELECTRICAL CHARACTERISTICS：

a、 Revised VIH as 2.2V

b、 Revised standby current ISB1 of LL-version

Typical : 3uAB2uA

Maximum : 25uAB20uA

3. Revised AC ELECTRICAL CHARACTERISTICS：

a、 Revised tOH as 10ns (min.)

4. Revised 36-pin TFBGA package outline dimension：

a、 Rev. 0.1 ball diameter=0.3mm

b、 Rev. 1.0 ball diameter=0.35mm

1.Revised “FEATURES” Operating current :

40/35/25mA(ICC max) 20/18/15mA (ICC typ.)

2.TRUTH TABLE & DC ELECTRICAL : Delete ISB2

3.Revised VTERM : -0.5 to Vcc+0.3V -0.5 to 4.6V

4.Added VOH : 2.7V at Vcc=3.0V

5.Revised DC (ICC max) 45/35/25mA 35/30/25mA

(ICC typ.) 30/25/20mA 20/18/15mA

6.Add under/overshoot range of VIL & VIH

7.Revised AC tOHZ*@100ns (max): 35ns 30ns

tWHZ*(max) :30/30/40 20/25/30ns

8.Revised “Data retention Characteristics” :

IDR-LL (Typ.) : NA 1uA, IDR-L (Typ.) : NA

IDR-LL (Max.) : 25uA 6uA

tR(min) : 5ns ”tRC”

9.Add order information for lead free product

10uA

Release Date

Jun 18, 2001

Jul 30, 2002

Apr 28, 2003

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80059

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