UT62L12816 查看數據表（PDF） - Utron Technology Inc

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UT62L12816

128K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.4

UTRON

UT62L12816

128K X 16 BIT LOW POWER CMOS SRAM

REVISION HISTORY

REVISION

Preliminary Rev. 0.5

Rev. 1.0

Rev. 1.1

Rev. 1.2

Rev. 1.3

Rev. 1.4

1. Original.

DESCRIPTION

1. The symbols CE# and OE# and WE# are revised as. CE and

OE and WE .

2. Separate Industrial and Commercial SPEC.

3. Add access time 55ns range.

1. The extended temperature range is revised.

-20℃~80℃B-20℃~85℃

1. Revised Power supply

a、 55ns (max.) for Vcc=2.7V~3.6V

b、 70/100ns (max.) for Vcc=2.5V~3.6V

2. Revised block diagram

3. Revised DC ELECTRICAL CHARACTERISTICS：

a、 Revised VIH as 2.2V

b、 Revised standby current ISB1 of LL-version

Typical : 3uAB2uA

Maximum : 25uAB20uA

4. Revised AC ELECTRICAL CHARACTERISTICS：

c、 Revised symbol name tHZB as tBHZ

d、 Revised symbol name tLZB as tBLZ

e、 Revised symbol name tPWB as tBW

f、 Revised tBLZ as 10ns (min.)

g、 Revised tOH as 10ns (min.)

5. Revised waveforms

6. Revised 48-pin TFBGA package outline dimension：

h、 Rev. 1.1 ball diameter=0.3mm

i、 Rev. 1.2 ball diameter=0.35mm

Order information : add 100ns parts

Add order information for lead free product

Released Date

Mar, 2001

Jun 21, 2001

Aug 24, 2001

Apr 15, 2002

Aug 05, 2002

May 09, 2003

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80050

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