UT62L2568BS-70LI 查看數據表（PDF） - Utron Technology Inc

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UT62L2568BS-70LI

256K X 8 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



UTRON

Preliminary Rev. 0.1

UT62L2568(I)

256K X 8 BIT LOW POWER CMOS SRAM

FEATURES

Fast access time :

55ns(max.) for Vcc=2.7V~3.6V

70ns(max.) for Vcc=2.5V~3.6V

CMOS Low operating power

Operating : 40/25mA (Icc max.)

Standby : TA=0℃~50℃

20 uA(max.) L -version

3 uA(max.) LL-version

Single 2.5V~3.6V power supply

Operating temperature:

Industrial : -40℃~85℃

All inputs and outputs TTL compatible

Fully static operation

Three state outputs

Data retention voltage: 1.5V (min)

Package : 32-pin 8mm x 20mm TSOP-Ⅰ

32-pin 8mm x 13.4mm STSOP

36-pin 6mm × 8mm TFBGA

GENERAL DESCRIPTION

The UT62L2568 is a 2,097,152-bit low power CMOS

static random access memory organized as 262,144

words by 8 bits. It is fabricated using high

performance, high reliability CMOS technology.

The UT62L2568 is designed for very low power

system applications. It is particularly well suited for

battery back-up nonvolatile memory applications.

It operates from a wide range of 2.5V~ 3.6V supply

voltage. Easy memory expansion is provided by

using two chip enable input ( CE 1 ,CE2). And all

inputs and three-state outputs are fully TTL

compatible.

FUNCTIONAL BLOCK DIAGRAM

A0-A17

Vcc

Vss

DECODER

256K × 8

MEMORY

ARRAY

I/O1-I/O8

I/O DATA

CIRCUIT

COLUMN I/O

CE1

CE2

OE

WE

CONTROL

CIRCUIT

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80082

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