SP6644 查看數據表（PDF） - Signal Processing Technologies

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SP6644

Single/Dual Alkaline Cell, High Efficiency Boost DC-DC Regulator

Signal Processing Technologies 

ELECTRICAL CHARACTERISTICS

VBATT = VSHDN = 1.3V, ILOAD = 0mA, FB = GND, TAMB = -40oC to +85oC, and typical values are at TAMB = +25oC unless otherwise noted.

PARAMETER

MIN. TYP. MAX. UNITS

CONDITIONS

Quiescent Current into V , I

OUT QOUT

Quiescent Current into VBATT, IQBATT

Shutdown Current into VOUT, ISHDNOUT

Shutdown Current into VBATT, ISHDNBATT

Low Output Voltage for BATTLO, VOL

Leakage Current for BATTLO

50 80

1.6 3.0

0.001 0.5

0.005 0.1

0.4

1

Efficiency

89

Inductor Peak Current, IPEAK

Under Voltage Lock-out (UVLO)

275 350 400

0.500 0.720

µA ♦ V = 3.5V

OUT

µA ♦ VBATT = 1.0V

µA ♦ VOUT = 3.5V, VSHDN - 0V

µA ♦ VBATT = 1.0V, VSHDN - 0V

V

♦ VBATT = 0.9V,VOUT = +3.3V,ISINK =1mA

µA

♦ VBATT = 2.6V,VBATTLO = 3.5V

%

♦ ILOAD = 150mA,VBATT = 2.6V

mA ♦ RLIM = 5kΩ, NOTE 3

V♦

NOTE 1: The reverse battery current is measured from the Typical Operating Circuit's input terminal to GND

when the battery is connected backward. A reverse current of 220mA will not exceed package dissipation limits

but, if left for an extended time (more than 10 minutes), may degrade performance.

NOTE 2: Specifications to -40oC are guaranteed by design, not production tested.

NOTE 3: Inductor Peak Current where . IPEAK =

1400

RLIM

Date: 11/30/04

SP6644/6645 High Efficiency Boost Regulator

3

© Copyright 2004 Sipex Corporation

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