SP6648(2004) 查看數據表（PDF） - Signal Processing Technologies

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SP6648
(Rev.:2004)

Ultra-low Quiescent Current, High Efficiency Boost Regulator

Signal Processing Technologies 

LX, Vo, VBATT , LBON, FB to GND pin ................................ -0.3 to 6.0V

SHDN, LBI ........................................................... -0.3V to VBATT +1.0V

Vo, GND, LX Current ....................................................................... 2A

Reverse VBATT Current .............................................................. 220mA

Forward VBATT Current .............................................................. 500mA

Storage Temperature .................................................. -65 °C to 150°C

ABSOLUTE MAXIMUM RATINGS

Operating Temperature ................................................ -40°C to +85°C

Lead Temperature (Soldering, 10 sec) ....................................... 300 °C

ESD Rating ........................................................................ 1.5kV HBM

These are stress ratings only and functional operation of the device at

these ratings or any other above those indicated in the operation sections

of the specifications below is not implied. Exposure to absolute maximum

rating conditions for extended periods of time may affect reliability.

ELECTRICAL SPECIFICATIONS

VBATT =VSHDN = 2.6V, VFB=0V, ILOAD = 0mA, TAMB= -40°C to +85°C, VOUT = +3.3V, typical values at 27°C unless otherwise

noted. The ♦ denotes the specifications which apply over full operating temperature range -40*C to +85°C, unless otherwise

specified.

PARAMETER

MIN TYP MAX UNITS ♦

Input Voltage Operating Range, VBATT 0.7

4.5

V

♦

Output Voltage Range, VOUT

2.5

5.5

V

♦

Start-up Input Voltage, VBATT

0.85 1.1

V♦

Under Voltage Lock-out/UVLO

0.5 0.61 0.7

V♦

Output Voltage, VO

3.12 3.30 3.48 V ♦

Quiescent Current into VO, IQO

12

25

µA ♦

Quiescent Current into VBATT, IQB

250 750 nA ♦

Shutdown Current into VO, ISDO

1

500 nA ♦

Shutdown Current into VBATT, ISDB

250 750 nA ♦

Efficiency

84

%

92

%

Inductor Current Limit, IPK = 1600/RLIM 650 800 1000 mA ♦

1300 1600 2000 mA ♦

Output Current

100

mA

200

mA

150

mA

400

mA

Minimum Off-Time Constant KOFF

0.5 1.0 1.5 V*µs ♦

Maximum On-Time Constant KON

Enable Valid to Output Stable

2.5 4.0 5.5 V*µs ♦

300 500 µs

NMOS Switch Resistance

0.30 0.6

Ω

♦

PMOS Switch Resistance

0.30 0.6

Ω

♦

FB Set Voltage, VFB

1.19 1.25 1.31 V ♦

FB Input Current

1

100 nA ♦

LBI Falling Trip Voltage

0.56 0.61 0.66 V ♦

LBI Hysteresis

25

mV

Low Output Voltage for LBON, VOL

0.4

V

♦

Leakage current for LBON

1

µA ♦

SHDN Input Voltage, Note 1

VIL

VIH

1.0

VIL

VIH

2.0

0.25

♦

V♦

0.5

♦

♦

SHDN Input Current

1

100 nA ♦

LX Pin Leakage

3

µA

CONDITIONS

After Startup

RLOAD = 3kΩ

Internal Feedback Divider

VOUT = 3.3V, VFB = 1.5V, Toggle SHDN

VOUT = 3.3V, VFB = 1.5V

VSHDN = 0V

VSHDN = 0V, VBATT = 2.6V

VBATT = 1.3V, IOUT = 100mA, RLIM =2kΩ

VBATT = 2.6V, IOUT = 200mA, RLIM =2kΩ

RLIM = 2kΩ

RLIM = 1kΩ

VBATT = 1.3V, RLIM = 4kΩ

VBATT = 2.6V, RLIM = 4kΩ

VBATT = 1.3V, RLIM =2kΩ

VBATT = 2.6V, RLIM =2kΩ

KOFF ≤ TOFF (VOUT- VBATT)

KON ≥ TON (VBATT)

ILOAD = 1mA

INMOS = 100mA

IPMOS = 100mA

External feedback

VFB =1.3V

VBATT = 1.3V, ISINK = 1mA

VBATT = 1.3V, VLBON = 3.3V

VBATT = 1.3V

VBATT = 1.3V

VBATT = 2.6V

VBATT = 2.6V

Note 1: SHDN must transition faster than 1V/100mS for proper operation.

Date: 7/19/04

SP6648 Ultra-low Quiescent Current, High Efficiency Boost Regulator

2

© Copyright 2004 Sipex Corporation

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