1000M 查看數據表（PDF） - STMicroelectronics

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1000M

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

STMicroelectronics 

MSC1000M

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

Symbol

Test Conditions

BVCBO

BVEBO

BVCEO

ICES

hFE

IC = 1mA

IE = 1mA

IC = 5mA

VCE = 28V

VCE = 5V

IE = 0mA

IC = 0mA

IB = 0mA

IC = 100mA

Value

Unit

Min. Typ. Max.

50 — — V

3.5 — — V

20 — — V

— — 1.0 mA

15 — 120 —

DYNAMIC

Symbol

Test Conditions

POUT f = 1025 — 1150 MHz PIN = 50 mW

GP

f = 1025 — 1150 MHz PIN = 50 mW

Note: Pulse Width = 10µSec

Duty Cycle = 1%

IC = 120mA

TYPICAL PERFORMANCE

BROADBAND POWER AMPLIFIER

VCE = 18 V

VCE = 18 V

Value

Min. Typ. Max.

0.6 0.85 —

10.8 12.3 —

Unit

W

dB

NARROWBAND POWER

OUTPUT vs FREQUENCY

MAXIMUM OPERATING AREA for

FORWARD BIAS OPERATION

2/5

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