BTD4M 查看數據表（PDF） - SANYO -> Panasonic
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BTD4M Datasheet PDF : 2 Pages
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Ordering number :EN821C
Features
· Small size and light weight.
· DHD type package.
BTD4M
Silicon Planar Type
Bidirectional Diode
Package Dimensions
unit:mm
1107
[BTD4M]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Current
Junction Temperature
Storage Temperature
Symbol
IP
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
f=120Hz, pulse width 10µs
Parameter
Symbol
Conditions
Breakover Voltage
Breakover Voltage Deviation
Breakover Current
Temperature Coefficient of Breakover Voltage
Peak Output Voltage
Basic Circuit
VBO1(VBO2)
∆VBO |VBO1–VBO2|
IBO1(IBO2)
VP
Basic Characteristic
Rationgs
Unit
±2 A
–40 to +125 ˚C
–40 to +125 ˚C
Ratings
min typ
29
0.1
5
max
37
3
50
Unit
V
V
µA
%/˚C
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4289MO/9284KI, TS No.821-1/2
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