SSM9916J 查看數據表（PDF） - Silicon Standard Corp.

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SSM9916J

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Silicon Standard Corp. 

SSM9916H,J

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low on-resistance

Capable of 2.5V gate drive

Low drive current

Simple drive requirement

Description

D

G

S

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

VDS

VGS

ID @ TC=25°C

ID @ TC=125°C

IDM

PD @ TC=25°C

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @ 4.5V

Continuous Drain Current, VGS @ 4.5V

Pulsed Drain Current1

Total Power Dissipation

Linear Derating Factor

TSTG

TJ

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Rthj-c

Thermal Resistance Junction-case

Rthj-a

Thermal Resistance Junction-ambient

BV DSS

RDS(ON)

ID

18V

25mΩ

35A

GD S

TO-252(H)

GD

S

TO-251(J)

Rating

18

± 12

35

16

90

50

0.4

-55 to 150

-55 to 150

Units

V

V

A

A

A

W

W/°C

°C

°C

Max.

Max.

Value

2.5

110

Unit

°C/W

°C/W

Rev.2.02 1/29/2004

www.SiliconStandard.com

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