SSM9918H 查看數據表（PDF） - Silicon Standard Corp.

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SSM9918H

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Silicon Standard Corp. 

Low on-resistance

D

Capable of 2.5V gate drive

Low drive current

Surface mount package

G

S

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

SSM9918H,J

N-CHANNEL ENHANCEMENT-MODE

POWER MOSFET

BV DSS

R DS(ON)

ID

20V

14mΩ

45A

G DS

TO-252(H)

Absolute Maximum Ratings

Symbol

Parameter

VDS

VGS

ID@TC=25℃

ID@TC=125℃

IDM

PD@TC=25℃

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @ 4.5V

Continuous Drain Current, VGS @ 4.5V

Pulsed Drain Current1

Total Power Dissipation

Linear Derating Factor

TSTG

TJ

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Rthj-c

Thermal Resistance Junction-case

Rthj-a

Thermal Resistance Junction-ambient

G

D

S

TO-251(J)

Rating

20

± 12

45

20

140

48

0.38

-55 to 150

-55 to 150

Units

V

V

A

A

A

W

W/℃

℃

℃

Max.

Max.

Value

2.6

110

Unit

℃/W

℃/W

Rev.2.01 6/26/2003

www.SiliconStandard.com

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