SSM9918 查看數據表（PDF） - Silicon Standard Corp.
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SSM9918 Datasheet PDF : 6 Pages
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SSM9918H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
20 -
- 0.1
-
V
- V/℃
RDS(ON)
Static Drain-Source On-Resistance VGS=4.5V, ID=18A
-
- 14 mΩ
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=2.5V, ID=9A
VDS=VGS, ID=250uA
VDS=10V, ID=18A
VDS=20V, VGS=0V
VDS=20V ,VGS=0V
VGS= ± 12V
ID=18A
VDS=20V
VGS=5V
VDS=10V
ID=18A
RG=3.3Ω,VGS=5V
RD=0.56Ω
VGS=0V
VDS=20V
f=1.0MHz
-
- 28 mΩ
0.5 - 1.2 V
- 26 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 19 - nC
- 1.5 - nC
- 10.5 - nC
- 7.5 - ns
- 83 - ns
- 18 - ns
- 23 - ns
- 500 - pF
- 310 - pF
- 125 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25℃, IS=45A, VGS=0V
Min. Typ. Max. Units
-
- 45 A
-
- 140 A
-
- 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/26/2003
www.SiliconStandard.com
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