9918H 查看數據表（PDF） - Silicon Standard Corp.

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产品描述 (功能)

比赛名单

9918H

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Silicon Standard Corp. 

SSM9918H,J

12

I D =18A

10

8

V DS =10V

V DS =15V

V DS =20V

6

4

2

0

0

5

10

15

20

25

30

35

Q G , Total Gate Charge (nC)

Fig 9. Gate Charge Characteristics

10000

f=1.0MHz

1000

Ciss

Coss

100

Crss

10

1

5

9

13

17

21

25

29

V DS (V)

Fig 10. Typical Capacitance Characteristics

100

10

T j =150 o C

1

T j =25 o C

0.1

0.01

0

0.4

0.8

1.2

1.6

V SD (V)

Fig 11. Forward Characteristic of

Reverse Diode

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

-50

0

50

100

150

Junction Temperature ( o C )

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

Rev.2.01 6/26/2003

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