SSM9928GEO 查看數據表（PDF） - Silicon Standard Corp.

零件编号

产品描述 (功能)

比赛名单

SSM9928GEO

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Silicon Standard Corp. 

SSM9928(G)EO

8

I D =5A

7

6

VDS =10V

5

VDS =15V

VDS =20V

4

3

2

1

0

0

5

10

15

20

25

Q G , Total Gate Charge (nC)

Fig 9. Gate Charge Characteristics

f=1.0MHz

10000

1000

Ciss

Coss

Crss

100

10

1

7

13

19

25

V DS (V)

Fig 10. Typical Capacitance Characteristics

100

10

T j =150 o C

1

T j =25 o C

0.1

0.01

0.2

0.5

0.8

1.1

V SD (V)

Fig 11. Forward Characteristic of

Reverse Diode

1.6

1.2

0.8

0.4

0

-50

0

50

100

150

Junction Temperature ( o C )

Fig 12. Gate Threshold Voltage vs.

Junction Temperature

Rev.2.01 12/06/2004

www.SiliconStandard.com

5 of 6

Share Link: