SSM9960G 查看數據表（PDF） - Silicon Standard Corp.
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SSM9960G Datasheet PDF : 5 Pages
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SSM9960(G)H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Description
D
G
S
The SSM9960H is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM9960J in TO-251, is available for low-footprint vertical
BV DSS
R DS(ON)
ID
40V
16mΩ
42A
G D S TO-252 (H)
G
This device is available with Pb-free lead finish
D
S
(second-level interconnect) as SSM9960GH or SSM9960GJ.
TO-251 (J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=100°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
40
± 20
42
26
195
45
0.36
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
2.8
110
Unit
°C/W
°C/W
11/16/2004 Rev.2.1
www.SiliconStandard.com
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