SSM9960 查看數據表（PDF） - Silicon Standard Corp.
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SSM9960 Datasheet PDF : 5 Pages
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14
12
I D =20A
10
V DS =12V
V DS =16V
8
V DS =20V
6
4
2
0
0
10
20
30
40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
10us
100us
10
1ms
T c =25 o C
Single Pulse
1
0.1
1
10
V DS , Drain-to-Source Voltage (V)
10ms
100ms
100
Fig 9. Maximum Safe Operating Area
SSM9960(G)H,J
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
10
1
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
tT
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
RD
D
RG
G
+
S
10V
-
VDS
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
VGS
VDS
D
TO THE
OSCILLOSCOPE
G
0.5x RATED VDS
S
VGS
+
1~ 3 mA
-
IG
ID
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
11/16/2004 Rev.2.1
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