SSM9962GM 查看數據表（PDF） - Silicon Standard Corp.

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SSM9962GM

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Silicon Standard Corp. 

SSM9962M/GM

14

I D =7A

12

V DS =20V

10

V DS =25V

V DS =32V

8

6

4

2

0

0

5

10

15

20

25

30

35

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

100

10

1

T c =25 o C

0.1

Single Pulse

1ms

10ms

100ms

1s

0.01

0.1

1

10

V DS (V)

DC

100

Fig 9. Maximum Safe Operating Area

f=1.0MHz

10000

Ciss

1000

Coss

Crss

100

10

1

5

9

13

17

21

25

29

VDS (V)

Fig 8. Typical Capacitance Characteristics

1

DUTY=0.5

0.2

0.1

0.1

0.05

0.02

0.01

Single Pulse

0.01

PDM

t

T

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 135°C/W

0.001

0.0001

0.001

0.01

0.1

1

10

t , Pulse Width (s)

100

1000

Fig 10. Effective Transient Thermal Impedance

8/21/2004 Rev.2.01

www.SiliconStandard.com

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