ST2301SRG 查看數據表（PDF） - STANSON TECHNOLOGY
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ST2301SRG Datasheet PDF : 6 Pages
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ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
VDSS
VGSS
ID
IDM
IS
PD
TJ
-20
±12
-3.0
-2.0
-10
-1.6
1.25
0.8
150
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TSTG
RθJA
-55/150
120
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301A 2005. V1
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