ST2301MSRG 查看數據表（PDF） - STANSON TECHNOLOGY
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ST2301MSRG Datasheet PDF : 7 Pages
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ST2301M
P Channel Enhancement Mode MOSFET
-3.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
-20
±12
-2.5
-1.5
-10
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
TA=25℃
TA=70℃
PD
Operation Junction Temperature
TJ
-1.6
1.25
0.8
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
120
Unit
V
V
A
A
A
W
℃
℃
℃/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301M 2007. V1
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