ST3403 查看數據表（PDF） - STANSON TECHNOLOGY
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ST3403 Datasheet PDF : 7 Pages
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P Channel Enchancement Mode MOSFET
-3.5A
ST3403
DESCRIPTION
The ST3403 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
3
A3YA
1
2
Y: Year Code A: Process Code
FEATURE
-30V/-2.8A, RDS(ON) = 105m-ohm
@VGS = -10V
-30V/-2.5A, RDS(ON) = 115m-ohm
@VGS = -4.5V
-30V/-1.5A, RDS(ON) = 155m-ohm
@VGS = -2.5V
-30V/-1.0A, RDS(ON) =255m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum
DC current capability
SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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