STB11NK40ZT4 查看數據表（PDF） - STMicroelectronics

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STB11NK40ZT4

N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

STMicroelectronics 

STB11NK40Z, STP11NK40ZFP, STP11NK40Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(2)

PTOT

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20KΩ)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

VESD(G-S)

dv/dt(3)

Gate source ESD (HBM-C= 100pF,

R= 1.5kΩ)

Peak diode recovery voltage slope

VISO Insulation withstand voltage (DC)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤9A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Value

TO-220/D²PAK

400

400

± 30

9

5.67

36

110

0.88

Unit

TO-220FP

9(1)

5.67(1)

36(1)

30

0.24

V

V

V

A

A

A

W

W/°C

3500

V

4.5

--

2500

V/ns

V

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

Value

TO-220/D²PAK

1.14

62.5

Unit

TO-220FP

4.2

°C/W

°C/W

300

°C

Doc ID 8936 Rev 7

3/17

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