B13NK60Z 查看數據表（PDF） - STMicroelectronics

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产品描述 (功能)

比赛名单

B13NK60Z

N-channel 600 V, 0.48 Ω, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

Drain current (continuous) at TC = 100 °C

IDM (2) Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

Derating factor

Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5 kΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO Insulation withstand voltage (AC)

Tj

Operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 13 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX

Value

TO-220 / TO-247

Unit

TO-220FP

D²PAK

600

V

± 30

V

13

13 (1)

A

8.2

8.2 (1)

A

52

52(1)

A

150

35

1.20

0.27

4000

4.5

W

W/°C

V

V/ns

--

2500

V

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-pcb (1) Thermal resistance junction-pcb max

Rthj-amb Thermal resistance junction-amb max

Tl

Maximum lead temperature for soldering

purpose

1. When mounted on minimum footprint

TO-220

TO-247

Value

Unit

D²PAK TO-220FP

0.83

3.6

°C/W

--

60

--

°C/W

62.5

°C/W

300

°C

Doc ID 8527 Rev 7

3/18

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