STB9NK50ZFP 查看數據表（PDF） - STMicroelectronics
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STB9NK50ZFP
STMicroelectronics
STB9NK50ZFP Datasheet PDF : 12 Pages
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STP9NK50Z - STP9NK50ZFP - STB9NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
(l) Pulse width limited by safe operating area
(1) ISD ≤7.2A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
STP9NK50Z
STB9NK50Z
STP9NK50ZFP
500
500
± 30
7.2
7.2 (*)
4.5
4.5 (*)
28.8
28.8 (*)
110
30
0.88
0.24
3500
4.5
-
2500
-55 to 150
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
TO-220
D2PAK
1.14
62.5
300
TO-220FP
4.2
°C/W
°C/W
°C
Max Value
7.2
190
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
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