W15NM60N 查看數據表（PDF） - STMicroelectronics

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W15NM60N

N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET

STMicroelectronics 

STB15NM60N - STF/I15NM60N

STP15NM60N - STW15NM60N

N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247

Second generation MDmesh™ Power MOSFET

Features

Type

VDSS

(@Tjmax)

RDS(on)

ID

STB15NM60N

STI15NM60N

STF15NM60N

STP15NM60N

STW15NM60N

650V

650V

650V

650V

650V

< 0.299Ω

< 0.299Ω

< 0.299Ω

< 0.299Ω

< 0.299Ω

14A

14A

14A (1)

14A

14A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Description

This series of devices implements the second

generation of MDmesh™ Technology. This

revolutionary Power MOSFET associates a new

vertical structure to the Company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters

Application

■ Switching applications

Order codes

Part number

STB15NM60N

STI15NM60N

STF15NM60N

STP15NM60N

STW15NM60N

Marking

B15NM60N

I15NM60N

F15NM60N

P15NM60N

W15NM60N

3

1

D²PAK

123

I²PAK

3

2

1

TO-220

TO-247

3

2

1

TO-220FP

Internal schematic diagram

Package

D²PAK

I²PAK

TO-220FP

TO-220

TO-247

Packaging

Tape & reel

Tube

Tube

Tube

Tube

May 2007

Rev 1

1/18

www.st.com

18

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