P10NK70Z 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
比赛名单
P10NK70Z
STMicroelectronics
P10NK70Z Datasheet PDF : 13 Pages
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2 Electrical characteristics
STP10NK70Z - STP10NK70ZFP
Table 7. Source drain diode
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDMNote 2 Source-drain Current (pulsed)
VSDNote 4 Forward on Voltage
ISD=8.6 A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=9A, di/dt = 100A/µs,
VDD=35 V, Tj=150°C
Table 8. Gate-source zener diode
Symbol
Parameter
Test Conditions
Min.
BVGSO
Note 6
Gate-Source
Igs=±1mA
Breakdown Voltage (Open Drain)
30
Min.
Typ. Max. Unit
8.6
A
34
A
1.6
V
720
ns
5.4
µC
15
A
Typ.
Max.
Unit
V
(1) ISD ≤8.6 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%VDSS
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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