B20NM60A 查看數據表（PDF） - STMicroelectronics

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B20NM60A

N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP MDmesh™ MOSFET

STMicroelectronics 

STB20NM60A-1

STP20NM60A - STF20NM60A

N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP

MDmesh™ MOSFET

TYPE

VDSS @Tjmax

RDS(on)

ID

STB20NM60A-1

STP20NM60A

STF20NM60A

650 V

650 V

650 V

< 0.29 Ω

< 0.29 Ω

< 0.29 Ω

20 A

20 A

20 A

s TYPICAL RDS(on) = 0.25Ω

s HIGH dv/dt

s LOW INPUT CAPACITANCE AND GATE CHARGE

s LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET tech-

nology that associates the Multiple Drain process with

the Company’s PowerMESH™ horizontal layout. The

resulting product has an outstanding low on-resis-

tance, impressively high dv/dt and excellent avalanche

characteristics. The adoption of the Company’s propri-

etary strip technique yields overall dynamic perfor-

mance that is significantly better than that of similar

competition’s products.

123

I²PAK

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SPECIFICALLY DESIGNED FOR ADAPTORS IN

QUASI-RESONANT CONFIGURATION

ORDER CODES

PART NUMBER

STB20NM60A-1

STP20NM60A

STF20NM60A

MARKING

B20NM60A

P20NM60A

F20NM60A

PACKAGE

I2PAK

TO-220

TO-220FP

PACKAGING

TUBE

TUBE

TUBE

March 2004

1/12

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