STF7N95K3 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STF7N95K3

N-channel 950 V, 1.1 Ω, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3™ Power MOSFET

STMicroelectronics 

STF7N95K3, STP7N95K3, STW7N95K3

Electrical characteristics

Table 6.

Symbol

Switching times

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test conditions

VDD = 475 V, ID = 3.6 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19)

Min. Typ. Max Unit

14

ns

9

ns

36

ns

23

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 7.2 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7.2 A, di/dt = 100A/µs

VDD = 60 V (see Figure 24)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7.2 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 24)

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

7.2 A

28.8 A

1.6 V

450

ns

6

µC

28

A

550

ns

8

µC

28

A

Table 8.

Symbol

Gate-source Zener diode

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO(1)

Gate-source breakdown

voltage

Igs=± 1mA (open drain)

30

V

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components

5/15

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