Philips Semiconductors
High-speed diode
Product specification
BAS678
FEATURES
• Small plastic SMD package
• High switching speed: max. 6 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 100 V
• Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
• High-speed switching in hybrid
thick and thin-film circuits.
DESCRIPTION
The BAS678 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular plastic SMD SOT23
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, halfpa2ge
1
2
n.c.
3
1
3
MAM185
Marking code: L52.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 10 ms
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
100
80
250
600
UNIT
V
V
mA
mA
−
9A
−
3A
−
1.7 A
−
250 mW
−65 +150 °C
−
150 °C
1996 Sep 10
2