SW7N65 查看數據表（PDF） - Unspecified

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SW7N65

N-channel TO-220F MOSFET

Unspecified 

SAMWIN

SW7N65B

N-channel TO-220F MOSFET

Features

TO-220F

■ High ruggedness

■ RDS(ON) (Max 1.4 Ω)@VGS=10V

■ Gate Charge (Typical 19nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1

23

General Description

1. Gate 2. Drain 3. Source

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

BVDSS : 650V

ID

: 7.0A

RDS(ON) : 1.4 ohm

2

1

3

Order Codes

Item

1

Sales Type

SW F 7N65B

Marking

SW7N65

Package

TO-220F

Packaging

TUBE

Absolute maximum ratings

Symbol

Parameter

VDSS

ID

IDM

VGS

EAS

EAR

dv/dt

PD

Drain to Source Voltage

Continuous Drain Current (@TC=25oC)

Continuous Drain Current (@TC=100oC)

Drain current pulsed

Gate to Source Voltage

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@TC=25oC)

Derating Factor above 25oC

(note 1)

(note 2)

(note 1)

(note 3)

TSTG, TJ

TL

Operating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Rthjc

Rthcs

Rthja

Parameter

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

Thermal resistance, Junction to ambient

Value

650

7.0*

4.4*

28

±30

535.1

70.6

5

65.17

0.52

-55 ~ + 150

300

Unit

V

A

A

A

V

mJ

mJ

V/ns

W

W/oC

oC

oC

Value

1.92

-

47.77

Unit

oC/W

oC/W

oC/W

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0

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