T1630 查看數據表（PDF） - STMicroelectronics
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T1630 Datasheet PDF : 8 Pages
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T1620W, T1630W
Characteristics
Table 3. Static characteristics
Symbol
Test conditions
VT (1)
VTO (1)
RD (1)
ITM = 22.5 A, tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
1. for both polarities of A2 referenced to A1.
Table 4.
Symbol
Thermal resistance
Parameter
Rth(j-c) Junction to case (AC) (360° conduction angle)
Rth(j-a) Junction to ambient
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.4
V
0.85
V
250
mΩ
5
µA
1
mA
Value
3.1
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current
temperature
P(W)
18
α=180°
16
14
12
10
8
6
4
180°
α
2
α
IT(RMS)(A)
0
0
2
4
6
8
10
12
14
16
IT(RMS)(A)
18
16
14
12
10
8
6
4
2
0
0
25
α=180°
TC(°C)
50
75
100
125
Figure 3. Relative variation of thermal
impedance versus pulse duration
K=[Zth/Rth]
1.E+00
1.E-01
Zth(j-c)
Zth(j-a)
Figure 4. On-state characteristics
(maximum values)
ITM(A)
100
Tj max.
Vt0 = 0.85V
Rd = 20 mΩ
Tj = Tj max.
10
1.E-02
Tj = 25°C
1.E-03
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00 1.E+01
1.E+02
1.E+03
VTM(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Doc ID 3759 Rev 1
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