T15M256B-85P 查看數據表（PDF） - Taiwan Memory Technology

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T15M256B-85P

32K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

DATA RETENTION CHARACTERISTICS

Item

Symbol

Test Condition

Vcc for data retention

VDR CS ≥ Vcc-0.2V

Data retention current IDR

Data retention set-up time tCDR

Recovery time

tR

Vcc=5.0, CS ≥ Vcc-0.2V

See data retention waveform

T15M256B

Min Typ max unit

1.5 -

-

V

-

10 uA

0

-

-

ms

5

-

-

DATA RETENTION WAVE FORM

Data Retention Mode

VCC

V cc_typ

tCDR

VDR > 1.5V

CS >VCC-0.2V

CS

V IH

Vcc_TYP

tR

V IH

TM Technology Inc. reserves the right

P. 6

to change products or specifications without notice.

Publication Date: OCT. 2003

Revision:C

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