TB62702F 查看數據表（PDF） - Toshiba

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TB62702F

TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

BLOCK DIAGRAM

TB62702P/F

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, VSS = 0 V)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Voltage

Input Voltage

Output Drain−Source Voltage

Output Current

P

Power Dissipation

F

Operating Temperature

Storage Temperature

VDD

−0.3~7.0

V

VIN

−0.3~VDD +0.3

V

VOUT

−0.4~30

V

IOUT

30

mA / bit

1.47

PD (Note 1)

W

0.96 (Note 2)

Topr

−40~85

°C

Tstg

−55~150

°C

Note 1: Delated above 25°C in the proportion of 11.7 mW / °C(P−type),

7.7 mW / °C(F−type).

Note 2: On Glass Epoxy (50 × 50 × 1.6mm Cu 40%)

2

2006-06-14

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