TC58NVG0S3AFT05 查看數據表（PDF） - Toshiba
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TC58NVG0S3AFT05 Datasheet PDF : 33 Pages
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TC58NVG0S3AFT05
VALID BLOCKS (1)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB
Number of Valid Blocks
1004
1024
Blocks
(1) The TC58NVG0S3A occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
Power Supply Voltage
VIH
High Level input Voltage
VIL
Low Level Input Voltage
* −2 V (pulse width lower than 20 ns)
MIN
2.7
2.0
−0.3*
TYP.
3.3
MAX
3.6
VCC + 0.3
0.8
UNIT
V
V
V
DC CHARACTERISTICS (Ta = 0 to 70°C, VCC = 2.7 V~3.3 V)
SYMBOL
PARAMETER
CONDITION
MIN TYP. MAX UNIT
IIL
Input Leakage Current
VIN = 0 V to VCC
±10
µA
ILO
Output Leakage Current
VOUT = 0 V to VCC
±10
µA
ICCO1
Reading
CE = VIL, IOUT = 0 mA, tcycle = 50 ns
10
30
mA
ICCO2
Programming Current
10
30
mA
ICCO3
Erasing Current
10
30
mA
ICCS1
Standby Current
CE = VIH, WP = 0 V/VCC
1
mA
ICCS2
Standby Current
CE = VCC − 0.2 V, WP = 0 V/VCC
50
µA
VOH
High Level Output Voltage
VCC, IOH = −400 µA
2.4
V
VOL
Low Level Output Voltage
VCC, IOL = 2.1 mA
0.4
V
IOL ( RY / BY ) Output current of RY / BY pin VOL = 0.4 V
8
mA
2003-08-20A 3/33
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