TEMD1000(2008) 查看數據表（PDF） - Vishay Semiconductors
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TEMD1000 Datasheet PDF : 8 Pages
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TEMD1000, TEMD1020, TEMD1030, TEMD1040
Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Reverse light current
Temperature coefficient of Ira
Absolute spectral sensitivity
Angle of half sensitivity
IF = 50 mA
IR = 100 µA, E = 0
VR = 10 V, E = 0
VR = 5 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 870 nm,
VR = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
VR = 5 V, λ = 870 nm,
VR = 5 V, λ = 870 nm
VR = 5 V, λ = 950 nm
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
VR = 10 V, RL = 50 Ω, λ = 820 nm
Fall time
VR = 10 V, RL = 50 Ω, λ = 820 nm
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VF
V(BR)
Iro
CD
Ira
Ira
TKIra
s(λ)
s(λ)
ϕ
λp
λ0.5
tr
tf
MIN.
60
5
TYP.
1
MAX.
1.3
1
10
1.8
10
12
0.2
0.60
0.55
± 15
940
790 to 1050
4
4
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
UNIT
V
V
nA
pF
µA
µA
%/K
A/W
A/W
deg
nm
nm
ns
ns
1000
1.4
100
10
VR = 10 V
1
20
40
60
80
100
94 8427 Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81564
Rev. 2.1, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
437
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