TGA4501-EPU 查看數據表（PDF） - TriQuint Semiconductor

零件编号

产品描述 (功能)

比赛名单

TGA4501-EPU

28-31 GHz Ka Band HPA

TriQuint Semiconductor 

Advanced Product Information

December 14, 2001

TGA4501-EPU

TABLE IV

RF WAFER CHARACTERIZATION TEST

(TA = 25°C + 5°C)

(Vd = 6V, Id = 2.048A ±5%)

Parameter

Frequency

Output P1dB

Small Signal Gain

Input Return Loss

Output Return Loss

Output TOI

Unit

Min Typical Max

GHz

28

31

dBm

33.5

34.5

dB

16

18

dB

-6

dB

-6

dBm

40

TABLE V

THERMAL INFORMATION*

Parameter

RθJC Thermal Resistance

(channel to backside of

carrier)

Test Conditions

Vd = 6V

ID = 2.048 A

Pdiss = 12.288 W

TCH

(oC)

127.65

RθJC

(°C/W)

4.69

TM

(HRS)

7.4E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at

70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power

is dissipated.

* This information is a result of a thermal model analysis.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

4

Share Link: