TGA4508(2005) 查看數據表（PDF） - TriQuint Semiconductor

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TGA4508
(Rev.:2005)

Ka Band Low Noise Amplifier

TriQuint Semiconductor 

Advance Product Information

July 19, 2005

TGA4508

TABLE III

ELECTRICAL CHARACTERISTICS

(Ta = 25 0C, Nominal)

PARAMETER

Drain Voltage, Vd

Drain Current, Id

Gate Voltage, Vg

Small Signal Gain, S21

Input Return Loss, S11

Output Return Loss, S22

Noise Figure, NF

Output Power @ 1 dB Compression Gain @ 38 GHz,

P1dB

TYPICAL

3

40

-0.5 to 0

21

8

15

2.8

14

UNITS

V

mA

V

dB

dB

dB

dB

dBm

TABLE IV

THERMAL INFORMATION*

PARAMETER

RθJC Thermal

Resistance

(channel to backside of

carrier)

TEST

CONDITIONS

Vd = 3 V

ID = 40 mA

Pdiss = 0.12 W

TCH

RTJC

TM

(oC) (qC/W) (HRS)

85

125 2.2 E+13

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil

CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF

applied, 100% of DC power is dissipated.

3

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